BTS3125TFATMA1 vs BTS3060TFATMA1 비교

다음의 상세 나란히 비교: BTS3125TFATMA1 제조: Infineon 및 BTS3060TFATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTS3125TFATMA1 BTS3060TFATMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.54 $0.65
Product Type Single-channel N-channel low-side smart power switch Smart Low-Side Power Switch
Load Current (continuous) 2 A —
Load Current (pulsed) [DATA_NEEDED: pulsed drain current limit] —
RDS(on) typical 250 mΩ at 5 V Vbb —
Supply Voltage (Vbb, nominal) 5 V —
Supply Voltage (Vbb, operating) 5 V to 28 V —
Load Dump Transient Protection 40 V —
Input Logic Compatibility 3.3 V / 5 V CMOS —
On-State Resistance (max) [DATA_NEEDED: maximum RDS(on) over temp] —
열 저항, 접합-주변 [DATA_NEEDED: theta_JA value] —
동작 온도 범위 -40°C to +150°C -40°C to +150°C (junction)
Over-temperature Shutdown ~150°C with auto-restart —
Short-Circuit Protection Yes, current-limited —
Over-voltage Protection Yes (clamping at 40 V) —
ESD Protection Yes (per IEC 61000-4-2, [DATA_NEEDED: contact/air kV rating]) —
Status Flag Output Yes (fault feedback) —
패키지 PG-TO252-3-313 (DPAK, SC-63) PG-TO252-3 (DPAK), 3 pins (2+Tab)
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL moisture sensitivity level] —
RoHS 상태 Compliant Compliant
Manufacturer Family — HITFET
Number of Channels — 1
On-Resistance (RDS(on) typ) — 50 mΩ at 25°C
Maximum Continuous Load Current — 3 A
Maximum Load Supply Voltage — 42 V
트랜지스터 유형 — N-Channel Vertical Power MOSFET (monolithically integrated)
Switch Configuration — Low-Side, 1:1
Input Type — Logic-level gate input (3.3V / 5V compatible)
Diagnostic Output — Status pin (open-drain, requires pull-up)
Embedded Protection — Overcurrent, Overtemperature, Overvoltage, Open-load detection
Automotive Qualification — AEC-Q100 qualified
Packaging — Tape & Reel (TF suffix)

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