BTS5215LAUMA1 vs BTS621L1E3128AAUMA1 비교

다음의 상세 나란히 비교: BTS5215LAUMA1 제조: Infineon 및 BTS621L1E3128AAUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTS5215LAUMA1 BTS621L1E3128AAUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.18 $2.62
Product Type Smart High-Side Power Switch Smart High-Side Power Switch (PROFET)
Number of Channels 2 2
On-State Resistance (RDS(on)) 90 mΩ typical per channel —
Continuous Output Current per Channel 3.7 A —
Operating Voltage Range 8 V to 36 V 5 V to 34 V
Standby Current Very low (datasheet value [DATA_NEEDED: standby current uA]) —
Input Logic Compatibility CMOS-compatible, ground-referenced —
Diagnostic Feedback Status feedback per channel Current-mirror IS pin (proportional load current sense)
MOSFET Technology N-channel vertical power MOSFET with charge pump —
Load Type Support Resistive and inductive loads —
Protection Features Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage Overload, short-circuit, over-temperature, over-voltage, reverse battery
Demagnetization Fast demagnetization of inductive loads —
패키지 PG-DSO-12-9 PG-TO263-7-2 (DPAK-style, 7 leads + tab)
동작 온도 -40C to +150C (TJ) [DATA_NEEDED: ambient range exact] -40 C to +150 C (junction)
RoHS 상태 Compliant —
Rds(on) per Channel (typ) — 8 mΩ
Continuous Load Current per Channel — 8.5 A
Load Dump Protection — Up to 42 V
Input Logic Level — CMOS-compatible, ground-referenced
On-State Resistance — 8 mΩ typical
실장 유형 — Surface Mount
Technology — Smart SIPMOS (vertical N-channel FET + charge pump + logic)
Automotive Qualification — AEC-Q100 (PROFET family)
Target Voltage Class — 24 V commercial vehicle systems (trucks, tractors, 24V industrial)
Lead-Free / RoHS — Yes (compliant)

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