BTS621L1E3128ABUMA1 vs BTS621L1E3128AAUMA1 비교

다음의 상세 나란히 비교: BTS621L1E3128ABUMA1 제조: Infineon 및 BTS621L1E3128AAUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTS621L1E3128ABUMA1 BTS621L1E3128AAUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.45 $2.62
Product Type Dual-channel smart high-side power switch (PROFET) Smart High-Side Power Switch (PROFET)
Number of Channels 2 (dual high-side, 1:1) 2
FET Topology N-Channel vertical power MOSFET with charge pump —
On-State Resistance Rds(on) 8 mΩ typical per channel —
Nominal Operating Voltage 12 V (automotive bus) —
Maximum Supply Voltage 24 V (load-dump survivable) —
Continuous Load Current 4.4 A per channel —
동작 온도 범위 -40 °C to +150 °C junction —
패키지 PG-TO263-7-2 (D2PAK-7, exposed tab) PG-TO263-7-2 (DPAK-style, 7 leads + tab)
실장 유형 Surface Mount Surface Mount
Input Logic Compatibility CMOS-compatible, ground-referenced —
Diagnostic Feedback Yes - open-load and overtemperature reporting Current-mirror IS pin (proportional load current sense)
Embedded Protection Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery —
Technology Smart SIPMOS (monolithic) Smart SIPMOS (vertical N-channel FET + charge pump + logic)
RoHS / Lead-Free Compliant (Pb-free) —
Rds(on) per Channel (typ) — 8 mΩ
Continuous Load Current per Channel — 8.5 A
Operating Voltage Range — 5 V to 34 V
Load Dump Protection — Up to 42 V
Input Logic Level — CMOS-compatible, ground-referenced
On-State Resistance — 8 mΩ typical
동작 온도 — -40 C to +150 C (junction)
Protection Features — Overload, short-circuit, over-temperature, over-voltage, reverse battery
Automotive Qualification — AEC-Q100 (PROFET family)
Target Voltage Class — 24 V commercial vehicle systems (trucks, tractors, 24V industrial)
Lead-Free / RoHS — Yes (compliant)

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