BTT62001ENAXUMA1 vs BTN9960LVAUMA1 비교

다음의 상세 나란히 비교: BTT62001ENAXUMA1 제조: Infineon 및 BTN9960LVAUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTT62001ENAXUMA1 BTN9960LVAUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Motor Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.72 $2.44
Product Type Smart High-Side Power Switch Integrated Half-Bridge Motor Driver
토폴로지 1:1 N-Channel High-Side P-channel high-side + N-channel low-side MOSFET with integrated driver IC
On-State Resistance (Ron) 200 mΩ (typical) —
Continuous Load Current 1.5 A —
Operating Voltage Range 5 V to 48 V —
Technology Smart6 HV (N-channel vertical MOSFET with charge pump) —
패키지 PG-TDSO-8-31 (DSO-8 with exposed pad) PG-HSOF-7-1
실장 유형 Surface Mount Surface Mount
Protection Features Overload, Short-Circuit, Over-Temperature, Over-Voltage, Reverse Battery Under-voltage, Over-current, Short-circuit, Over-temperature, Interleaved (shoot-through), Enable shutdown, Dead-time control
Diagnostic Output Current Sense (IS) pin —
Lamp Drive Capability 1 × R10W at 24 V or 1 × R5W at 12 V —
동작 온도 -40 °C to +150 °C junction —
MSL 레벨 2A (4 weeks) —
ECCN EAR99 —
REACH Status REACH Unaffected —
Path Resistance (typ @ 25C) — 9.7 mOhm
Overcurrent Detection Threshold — 35 A
Supply Voltage Range (operating) — 8 V to 18 V
Supply Voltage Range (max rating) — 40 V
Logic Input Low Voltage (max) — 1.3 V
Logic Input High Voltage (min) — 1.6 V
Turn-On Rise Time (typ) — 2.5 us
Turn-Off Fall Time (typ) — 250 ns
Dead Time (typ) — 250 ns
Standby Current (max) — 3.3 uA
Propagation Delay (typ) — 3.6 us
동작 온도 범위 — -40C to +150C
AEC-Q100 Qualification — Grade 1 qualified
RoHS 상태 — Compliant

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