EDB2432B4MA-1DAUT-F-D vs EDB5432BEBH-1DAUT-F-D 비교

다음의 상세 나란히 비교: EDB2432B4MA-1DAUT-F-D 제조: Micron Technology 및 EDB5432BEBH-1DAUT-F-D 제조: Micron Technology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Micron Technology
EDB2432B4MA-1DAUT-F-D EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D ✓ 활성
Micron Technology
EDB5432BEBH-1DAUT-F-D EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron

EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron

EDB5432BEBH-1DAUT-F-D ✓ 활성

사양 비교

파라미터 EDB2432B4MA-1DAUT-F-D EDB5432BEBH-1DAUT-F-D
브랜드 Micron Technology Micron Technology
카테고리 Memory ICs Memory ICs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $7.43 $2.45
메모리 유형 Volatile Memory - DRAM Mobile LPDDR2 SDRAM
Technology SDRAM - Mobile LPDDR2 —
메모리 크기 2 Gbit (64M x 32) 512 Mbit
메모리 구성 64M x 32 16M x 32
Clock Frequency 533 MHz 533 MHz
인터페이스 Parallel Parallel
패키지 134-VFBGA (10 x 11.5 mm) 134-VFBGA (10 x 11.5 mm)
Package Construction DDP (Double-Die Package) —
동작 온도 -40C to +125C (Automotive) [DATA_NEEDED: operating temperature range]
실장 유형 Surface Mount Surface Mount
Marking Code D9WVG —
Part Status Active —
Lead-Free Status Lead free (-F suffix) —
Halogen-Free Status Halogen free (-F suffix) —
공급 전압 [DATA_NEEDED: VDD/VDDQ supply voltage] —
Write Cycle Time - Word, Page [DATA_NEEDED: write cycle time] —
Supply Voltage Range — 1.14 V to 1.95 V
Core Voltage — 1.2 V (typical, LPDDR2)
Temperature Grade — Automotive
Terminals — 134 balls
Terminal Form — Ball (VFBGA)
Package Shape — Rectangular
RoHS Code — Yes (D suffix, lead-free)
Part Life Cycle Code — Active
Access Time / CAS Latency — [DATA_NEEDED: CAS latency]
Standard Qty per Reel/Tray — [DATA_NEEDED: packaging standard quantity]

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