EP2S180F1020C3 vs EP2S180F1508C3 비교
다음의 상세 나란히 비교: EP2S180F1020C3 제조: Intel 및 EP2S180F1508C3 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP2S180F1020C3 | EP2S180F1508C3 |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | Obsolete | Unknown |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1,280.00 | $0.00 |
| Series | Stratix II | Stratix II |
| Device Family | EP2S180 | — |
| Equivalent Logic Elements (LEs) | 179,400 | — |
| Logic Array Blocks (LABs) | 8,970 | — |
| Embedded Memory (RAM bits) | 9,383,040 | — |
| Maximum User I/Os | 742 | — |
| 패키지 | 1020-ball FBGA (flip-chip BGA) | 1508-BBGA, FCBGA |
| 실장 유형 | Surface Mount | Surface Mount |
| Process Node | 90 nm, all-layer copper SRAM | — |
| Core Voltage | 1.2 V | — |
| Speed Grade | C3 | — |
| 동작 온도 | Commercial (0C to +85C) | [DATA_NEEDED: operating temperature range] |
| DSP Blocks | Dedicated high-speed multipliers | — |
| Memory Interfaces Supported | DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| I/O Standards | LVDS, LVPECL, SSTL, HSTL | — |
| Configuration Method | SRAM-based (volatile, requires boot device) | — |
| Development Toolchain | Quartus II / Quartus Prime | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Product Type | — | Field Programmable Gate Array (FPGA) |
| Logic Array Blocks | — | 8,970 LABs |
| Gate Count | — | 180,000 gates |
| User I/Os | — | 1,170 I/Os |
| 공급 전압 | — | 1.15 V to 1.25 V |
| Supplier Device Package | — | 1508-FBGA (30x30 mm) |
| Terminal Form | — | Ball |
| Number of Terminals | — | 1,508 |
| Package Code | — | BGA |
| Logic Elements | — | [DATA_NEEDED: logic element count] |
| Embedded Memory | — | [DATA_NEEDED: embedded memory capacity] |
| Transceivers | — | [DATA_NEEDED: transceiver count and speed] |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 status] |