EP3CLS100F484I7 vs EP3C80F484I7N 비교
다음의 상세 나란히 비교: EP3CLS100F484I7 제조: Intel 및 EP3C80F484I7N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP3CLS100F484I7 | EP3C80F484I7N |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $113.60 | $286.91 |
| Device Family | Cyclone III LS | — |
| Logic Elements (LE) | 100,448 | — |
| Logic Array Blocks (LABs) | 278 | — |
| Total Embedded Memory Bits | 4,451,328 bits | — |
| Embedded Memory (M9K Blocks) | 610 (per datasheet family) | — |
| DSP Blocks (18x18 Multipliers) | 66 | — |
| 18x18 Hardware Multipliers | 16 dedicated | — |
| PLLs | 4 | — |
| Maximum User I/Os | 429 | — |
| 패키지 | 484-ball FBGA (FineLine BGA) | 484-ball FBGA, 23 x 23 mm, 1.0 mm pitch |
| Core Supply Voltage | 1.2 V | — |
| I/O Standards Supported | LVDS, LVCMOS, LVTTL, SSTL, HSTL | — |
| 동작 온도 범위 | -40C to +85C (Industrial) | — |
| Process Technology | TSMC 65 nm low-power (LP) | 60 nm low-power CMOS, SRAM-based |
| Configuration Method | Serial/Parallel, AES-256 encrypted (LS feature) | AS / PS / JTAG / FPP |
| External Memory Support | DDR, DDR2, QDRII, RLDRAM II | — |
| RoHS 상태 | Compliant | Compliant |
| Series | — | Cyclone III |
| Device Type | — | FPGA - Field Programmable Gate Array |
| Logic Elements | — | 81,264 |
| Embedded Memory (RAM bits) | — | 2,810,880 |
| User I/O Count | — | 295 |
| Number of Logic Blocks / CLBs | — | 81,264 |
| Core Supply Voltage VCCINT | — | 1.15 V to 1.25 V (nominal 1.2 V) |
| I/O Supply Voltage VCCIO | — | 1.5 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V |
| Maximum Internal Clock Frequency | — | 472.5 MHz |
| Number of PLLs | — | 4 |
| Number of 18x18 Multipliers | — | 244 |
| Operating Temperature (Junction) | — | -40C to +100C (industrial I7 grade) |
| 실장 유형 | — | Surface Mount |
| Lead-Free | — | Yes |
| MSL 레벨 | — | 3 |