EP3SE260H780C4LG vs EP3SE260H780C2N 비교
다음의 상세 나란히 비교: EP3SE260H780C4LG 제조: Altera 및 EP3SE260H780C2N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP3SE260H780C4LG | EP3SE260H780C2N |
|---|---|---|
| 브랜드 | Altera | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 최종 구매 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1,290.00 | $3,600.00 |
| Family | Stratix III Enhanced (EP3SE) | — |
| Logic Elements | 254,400 | 255,000 |
| Adaptive Logic Modules (ALMs) | 101,760 | — |
| Embedded Memory (M9K + M144K) | 18.36 Mbits | — |
| DSP Blocks (18-bit x 18-bit) | 768 | — |
| 18-bit x 18-bit Multipliers | 1,536 | — |
| Transceivers (full-duplex) | 8 (up to 6.375 Gbps) | — |
| Maximum User I/O Pins | 488 | — |
| 패키지 | 780-ball FineLine BGA (HBGA, 29 mm x 29 mm, 1.0 mm pitch) | 780-BGA FCBGA |
| Speed Grade | C4 (commercial, mid-speed tier) | C2 |
| Temperature Grade | Commercial (0C to +85C junction) | — |
| Process Technology | 65 nm TSMC low-power CMOS | — |
| Operating Voltage (Core) | 0.9 V / 1.0 V / 1.1 V (programmable) | — |
| External Memory Interface | Up to 800 Mbps DDR3, QDR II+, RLDRAM II | — |
| Hard IP Blocks | PCIe Gen2, 10GbE MAC, memory controllers | — |
| RoHS 상태 | Compliant (Pb-free HBGA) | [DATA_NEEDED: rohs status] |
| MSL 레벨 | 3 (per JEDEC J-STD-020) | 3 (168 hours) |
| 실장 유형 | Surface Mount (BGA) | Surface Mount |
| Series | — | Stratix III E |
| LABs / CLBs | — | 10,200 |
| Total RAM Bits | — | 16,672,768 |
| User I/O Count | — | 488 |
| Number of Transceivers | — | [DATA_NEEDED: transceiver count] |
| Core Voltage | — | 0.9 V |
| 동작 온도 범위 | — | Commercial (0C to +85C) |
| Reflow Peak Time Max | — | 40 s |
| Lead-Free | — | [DATA_NEEDED: lead-free] |
| Package Code | — | BGA |
| Terminal Form | — | Ball |
| Number of Terminals | — | 780 |
| Process Node | — | 40 nm |