EP4CE115F23I7N vs EP4CE75F23I7N 비교
다음의 상세 나란히 비교: EP4CE115F23I7N 제조: Intel 및 EP4CE75F23I7N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP4CE115F23I7N | EP4CE75F23I7N |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $87.95 | $118.00 |
| Series | Cyclone IV E | — |
| Family | EP4CE115 (F23 package) | Cyclone IV E (EP4CE) |
| Logic Elements (LE) | 114,480 | — |
| Embedded Memory Bits | 3,981,312 bits | 2,810,880 bits (312 M9K blocks) |
| Maximum User I/Os | 280 | 292 |
| Logic Array Blocks (LABs) | 7,180 | 4,713 |
| Number of PLLs | 4 | — |
| 18x18 Hardware Multipliers | 266 | — |
| Core Voltage | 1.0 V / 1.2 V | — |
| I/O Voltage Banks | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| 동작 온도 | -40C to +100C (Industrial) | — |
| 패키지 | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch | 484-ball FBGA (F23, 23 mm body, 1.0 mm pitch) |
| 실장 유형 | Surface Mount | — |
| Process Technology | 60 nm low-power CMOS (TSMC) | 60 nm low-power CMOS |
| Configuration Method | JTAG, Active Serial, Active Parallel | — |
| MSL 레벨 | 3 | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Line | — | Cyclone IV E |
| Logic Elements (LEs) | — | 75,408 |
| Distributed RAM Bits | — | 200 Kbits |
| Embedded 18x18 Multipliers | — | 15 |
| PLLs | — | 4 |
| Global Clocks | — | [DATA_NEEDED: global clock network count] |
| Core Voltage (VCCINT) | — | 1.2 V nominal |
| I/O Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) |
| Operating Temperature Grade | — | Industrial (I7: -40C to +100C Tj) |
| Configuration Modes | — | Active Serial (AS), Passive Serial (PS), JTAG |
| External Memory Interfaces | — | DDR / DDR2 SDRAM, QDRII SRAM |
| Design Software | — | Quartus II / Quartus Prime |