EP4CE55F29I8N vs EP4CE55F29I7N 비교
다음의 상세 나란히 비교: EP4CE55F29I8N 제조: Altera 및 EP4CE55F29I7N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP4CE55F29I8N | EP4CE55F29I7N |
|---|---|---|
| 브랜드 | Altera | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $195.00 | $154.80 |
| Series | Cyclone IV E | — |
| Logic Elements (LEs) | 55,856 | — |
| Embedded Memory (bits) | 2,396,160 | — |
| Embedded 18x18 Multipliers | 374 | — |
| General-Purpose PLLs | 4 | — |
| Maximum User I/O Pins | [DATA_NEEDED: maximum user I/O count for F29 package] | — |
| 패키지 | 780-ball FBGA (F29, 29x29 mm) | 780-ball FBGA (F29), 29 mm x 29 mm, 1.0 mm pitch |
| Process Technology | 60 nm low-power CMOS | 60 nm low-k |
| 동작 온도 | -40C to +100C (Industrial grade, suffix I) | — |
| Supply Voltage Core | 1.0 V (typical, VCCINT) | — |
| I/O Bank Supply Voltages | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V | — |
| Configuration Modes | Active Serial (AS), Passive Serial (PS), JTAG, Fast Passive Parallel (FPP) | — |
| External Memory Interfaces | DDR, DDR2, SDR, QDRII, QDRII+ SRAM | — |
| Differential I/O Standards | LVDS, RSDS, mini-LVDS, LVPECL (receive) | — |
| RoHS 상태 | Compliant | Compliant |
| 실장 유형 | Surface Mount (BGA) | Surface Mount |
| Family | — | Cyclone IV E |
| Logic Elements (LE) | — | 55,856 |
| Embedded Memory Bits | — | 2,396,160 |
| Number of LABs/CLBs | — | 3491 |
| Maximum User I/O | — | 374 |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V (bank-dependent) |
| Number of PLLs | — | 4 |
| Global Clock Networks | — | 20 |
| Dedicated Clock Pins | — | 11 |
| Embedded Multipliers (18x18) | — | 154 |
| Speed Grade | — | I7 (industrial) |
| 동작 접합 온도 | — | -40 C to +100 C |
| Supply Type | — | Tray |