EP4CE75F23I8LN vs EP4CE75F23C9LN 비교
다음의 상세 나란히 비교: EP4CE75F23I8LN 제조: Intel 및 EP4CE75F23C9LN 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP4CE75F23I8LN | EP4CE75F23C9LN |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $199.50 | $139.85 |
| Series | Cyclone IV E | Cyclone IV E |
| Family | Cyclone IV E (EP4CE75) | Cyclone IV E (EP4CE75) |
| Logic Elements (LE) | 75,408 | — |
| Logic Array Blocks (LAB) | [DATA_NEEDED: LAB count] | — |
| Embedded Memory (M9K blocks) | 305 blocks | — |
| Embedded Memory (bits) | 2,810,880 bits | — |
| Embedded 18 x 18 Multipliers | 244 | — |
| General-purpose PLLs | 4 | — |
| Maximum User I/Os | 292 | — |
| User I/O Banks | 8 | — |
| 패키지 | 484-ball FBGA (F23) 1.0 mm pitch | 484-ball FBGA (F23), 23 x 23 mm, 1.0 mm pitch |
| Supply Voltage - Core | 1.2 V | — |
| 동작 온도 | -40C to +100C (Industrial) | [DATA_NEEDED: exact Tj/grade letter for C9 speed grade] |
| Process Technology | 60 nm low-power CMOS | 60 nm CMOS, low-power |
| Configuration Modes | JTAG, AS, PS, FPP | — |
| RoHS 상태 | Compliant | — |
| MSL 레벨 | 3 | — |
| Logic Elements (LEs) | — | 75,408 |
| Logic Array Blocks (LABs) | — | 4,713 |
| Total RAM Bits | — | 2,810,880 bits (274 Kbits M9K + 200 Kbits distributed) |
| Embedded 18x18 Multipliers | — | 15 |
| PLLs | — | 4 |
| Maximum User I/O | — | 292 |
| I/O Banks | — | 8 |
| Core Voltage (VCCINT) | — | 1.2 V |
| Analog Voltage (VCCA) | — | 2.5 V |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V (per bank) |
| Maximum Internal Frequency | — | 265 MHz (per FindIC) / 200 MHz (typical logic) |
| Configuration Schemes | — | AS, AP, FPP, PS, JTAG |
| RoHS / Lead-Free | — | Lead-free (per FindIC part description) |
| 실장 유형 | — | Surface Mount |
| Speed Grade | — | C9 (commercial, 9 ns) |