EP4CE75F29I7 vs EP4CE75F23I7N 비교
다음의 상세 나란히 비교: EP4CE75F29I7 제조: Intel 및 EP4CE75F23I7N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EP4CE75F29I7 | EP4CE75F23I7N |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $121.30 | $118.00 |
| Series | Cyclone IV E | — |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements (LEs) | 75,408 | 75,408 |
| Embedded Memory (bits) | 2,810,880 | — |
| Embedded Memory Blocks | 274 (M9K) | — |
| Embedded 18×18 Multipliers | 200 | — |
| PLLs | 4 | 4 |
| User I/O Count | 426 | — |
| 패키지 | 780-ball FBGA (FineLine BGA) | 484-ball FBGA (F23, 23 mm body, 1.0 mm pitch) |
| 동작 온도 | -40 °C to +100 °C (Industrial) | — |
| Process Node | 60 nm low-power CMOS | — |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V selectable | 1.2 V nominal |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS) | Active Serial (AS), Passive Serial (PS), JTAG |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, SSTL, HSTL | — |
| External Memory Interfaces | DDR/DDR2 SDRAM, QDRII SRAM | DDR / DDR2 SDRAM, QDRII SRAM |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 3 (168 hours) | — |
| 실장 유형 | Surface Mount (BGA) | — |
| Product Line | — | Cyclone IV E |
| Family | — | Cyclone IV E (EP4CE) |
| Logic Array Blocks (LABs) | — | 4,713 |
| Embedded Memory Bits | — | 2,810,880 bits (312 M9K blocks) |
| Distributed RAM Bits | — | 200 Kbits |
| Embedded 18x18 Multipliers | — | 15 |
| Global Clocks | — | [DATA_NEEDED: global clock network count] |
| Maximum User I/Os | — | 292 |
| I/O Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) |
| Process Technology | — | 60 nm low-power CMOS |
| Operating Temperature Grade | — | Industrial (I7: -40C to +100C Tj) |
| Design Software | — | Quartus II / Quartus Prime |