EPF10K250EBC600-3 vs EPF10K250EBI600-3 비교
다음의 상세 나란히 비교: EPF10K250EBC600-3 제조: Intel 및 EPF10K250EBI600-3 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EPF10K250EBC600-3 | EPF10K250EBI600-3 |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | Obsolete | 최종 구매 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $205.00 | $110.00 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 LEs | 12,160 |
| Typical Gates | 250,000 | — |
| Maximum User I/O | 470 | 470 |
| Embedded Array Blocks (EABs) | 12 (each 2 Kbits) | — |
| Total Embedded Memory | 24 Kbits (RAM) | — |
| PLLs (Phase-Locked Loops) | 4 | — |
| Dedicated Clock Inputs | 6 | — |
| Speed Grade | -3 | -3 (fastest) |
| Core Supply Voltage | 3.3 V | — |
| I/O Supply Voltage | 3.3 V (5 V tolerant) | — |
| 패키지 | 600-ball FineLine BGA | 600-ball BGA (HBGA) |
| Configuration Mode | Passive Serial / Passive Parallel / JTAG | — |
| Boundary Scan | IEEE 1149.1 (JTAG) | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] |
| Process Technology | SRAM-based CMOS | 0.22 µm CMOS, 4-layer metal |
| Typical Gate Count | — | 250,000 system gates |
| Embedded System Blocks (ESBs) | — | 12 |
| Dedicated Inputs | — | 4 |
| PLLs | — | 4 |
| On-chip RAM | — | Up to 40 Kbits |
| Ball Pitch | — | 1.93 mm |
| Core Voltage | — | 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] |
| Configuration Method | — | SRAM, requires external configuration device (EPC series) |
| 실장 유형 | — | Surface Mount |
| RoHS 상태 | — | Not specified (SnPb / tin-lead finish per legacy distributor listing) |
| Lead-free | — | no (legacy tin-lead per distributor description) |