IAUA220N08S5N021AUMA1 vs IQE013N04LM6ATMA1 비교

다음의 상세 나란히 비교: IAUA220N08S5N021AUMA1 제조: Infineon 및 IQE013N04LM6ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUA220N08S5N021AUMA1 IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon

IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon

IAUA220N08S5N021AUMA1 ✓ 활성

사양 비교

파라미터 IAUA220N08S5N021AUMA1 IQE013N04LM6ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.45 $0.71
Technology OptiMOS-5 (75V-120V family) OptiMOS N-channel trench MOSFET
Drain-Source Voltage (V_DS max) 80 V —
Continuous Drain Current (I_D, Tj) 220 A —
Static Drain-Source On-Resistance (R_DS(on)) 2.1 mΩ at 10 V V_GS —
Power Dissipation (P_D, Tc) 211 W —
Gate-Source Voltage (V_GS max) [DATA_NEEDED: V_GS max absolute rating] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical/min/max] —
동작 온도 범위 -55C to +175C (Tj) -55 °C to +175 °C
패키지 PG-HSOF-5-4 (7x8 mm²) PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down
실장 유형 Surface Mount Surface Mount
Channel Type N-Channel —
Automotive Qualification AEC-Q101 qualified —
MSL 레벨 [DATA_NEEDED: MSL moisture sensitivity level] —
RoHS 상태 Compliant Compliant
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g typical at V_GS=10V] —
Output Capacitance (C_oss) [DATA_NEEDED: C_oss typical] —
Thermal Resistance (R_thJC) [DATA_NEEDED: junction-to-case thermal resistance] —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (Ta) — 31 A
Continuous Drain Current (Tc) — 205 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 107 W
On-Resistance RDS(on) max — [DATA_NEEDED: RDS(on) max value at VGS=10V]
On-Resistance RDS(on) typ — 1.35 mΩ @ VGS=10 V, ID=20 A
Gate Threshold Voltage (VGS(th)) — 2 V (typ)
Source-Down Topology — Yes (flip-chip die attach, drain on top thermal pad)

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