IAUC60N04S6N044ATMA1 vs IAUC80N04S6N036ATMA1 비교

다음의 상세 나란히 비교: IAUC60N04S6N044ATMA1 제조: Infineon 및 IAUC80N04S6N036ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUC80N04S6N036ATMA1 IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 ✓ 활성

사양 비교

파라미터 IAUC60N04S6N044ATMA1 IAUC80N04S6N036ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.98 $0.86
Technology OptiMOS-6 N-channel trench MOSFET —
Drain-Source Voltage (V_DS) 40 V 40 V
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at Tc=25°C 60 A —
Continuous Drain Current (I_D) at Tc=100°C [DATA_NEEDED: pulsed/current derated value] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max @ V_GS=10V 4.4 mΩ —
On-Resistance R_DS(on) max @ V_GS=4.5V [DATA_NEEDED: R_DS(on) at V_GS=4.5V] —
Total Gate Charge (Q_g) [DATA_NEEDED: typical gate charge] —
Power Dissipation (P_D) at Tc=25°C 42 W —
동작 접합 온도 -55°C to +175°C —
패키지 PG-TDSON-8 (5x6 mm) with exposed pad PG-TDSON-8 (SuperSO8 5x6 mm)
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 (unlimited) 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 qualified (IAUC prefix) —
RoHS 상태 Compliant —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Manufacturer — Infineon Technologies
Part Family — OptiMOS-6 40 V
Polarity — N-Channel
Continuous Drain Current (I_D) at T_C — 80 A
Power Dissipation (P_D) at T_C — 50 W
On-Resistance R_DS(on) max at V_GS=10V — 3.6 mOhm
On-Resistance R_DS(on) max at V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
동작 온도 범위 — -55 C to +175 C
AEC-Q101 Qualification — Qualified (Automotive)
Terminal Finish — Tin (Sn) (e3 per JESD-609)
Peak Reflow Temperature — 260 C (per JEDEC J-STD-020)
Compliance - RoHS — Compliant
Compliance - REACH — Compliant

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