IAUC60N04S6N044ATMA1 vs IAUCN04S7N009ATMA1 비교
다음의 상세 나란히 비교: IAUC60N04S6N044ATMA1 제조: Infineon 및 IAUCN04S7N009ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUC60N04S6N044ATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.98 | $1.55 |
| Technology | OptiMOS-6 N-channel trench MOSFET | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| 동작 접합 온도 | -55°C to +175°C | — |
| 패키지 | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8-34 (Surface Mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 (unlimited) | 1 |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| 동작 온도 | — | -55C to +175C |
| Qualification | — | AEC-Q101 (Automotive) |
| Configuration | — | Single N-Channel |
| Supplier Device Package | — | PG-TDSON-8-34 |