IAUC60N06S5L073ATMA1 vs IAUC80N04S6N036ATMA1 비교
다음의 상세 나란히 비교: IAUC60N06S5L073ATMA1 제조: Infineon 및 IAUC80N04S6N036ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUC60N06S5L073ATMA1 | IAUC80N04S6N036ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.41 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tj | 60 A | — |
| On-Resistance RDS(on) max | 7.3 mΩ | — |
| Total Gate Charge (QG) | 17.4 nC | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| 패키지 | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55C to +175C | -55 C to +175 C |
| Technology | Trench (OptiMOS 5) | — |
| 핀 수 | 8 | — |
| Configuration | Single N-Channel | — |
| Qualification | AEC-Q101 automotive grade | — |
| RoHS 상태 | Compliant | — |
| MSL 레벨 | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Thermal Resistance RθJA | [DATA_NEEDED: thermal resistance junction-to-ambient] | — |
| Part Family | — | OptiMOS-6 40 V |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at T_C | — | 80 A |
| Power Dissipation (P_D) at T_C | — | 50 W |
| On-Resistance R_DS(on) max at V_GS=10V | — | 3.6 mOhm |
| On-Resistance R_DS(on) max at V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| AEC-Q101 Qualification | — | Qualified (Automotive) |
| Terminal Finish | — | Tin (Sn) (e3 per JESD-609) |
| Peak Reflow Temperature | — | 260 C (per JEDEC J-STD-020) |
| Compliance - RoHS | — | Compliant |
| Compliance - REACH | — | Compliant |