IAUC60N06S5L073ATMA1 vs IPC90N04S5L3R3ATMA1 비교

다음의 상세 나란히 비교: IAUC60N06S5L073ATMA1 제조: Infineon 및 IPC90N04S5L3R3ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon

IAUC60N06S5L073ATMA1 ✓ 활성

사양 비교

파라미터 IAUC60N06S5L073ATMA1 IPC90N04S5L3R3ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.41 $0.96
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
트랜지스터 유형 N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tj 60 A —
On-Resistance RDS(on) max 7.3 mΩ —
Total Gate Charge (QG) 17.4 nC —
Power Dissipation (PD) at Tc 52 W —
패키지 PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-34 (TDSON-8)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +175C —
Technology Trench (OptiMOS 5) —
핀 수 8 —
Configuration Single N-Channel —
Qualification AEC-Q101 automotive grade AEC-Q101 automotive qualified
RoHS 상태 Compliant —
MSL 레벨 [DATA_NEEDED: MSL level] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Thermal Resistance RθJA [DATA_NEEDED: thermal resistance junction-to-ambient] —
Product Family — OptiMOS 5 40V
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
동작 접합 온도 — -55°C to +175°C
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Avalanche Tested — 100% (production-level)
RoHS Compliance — Compliant (Green Product)

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