IAUC80N04S6N036ATMA1 vs IAUCN04S6N009TATMA1 비교
다음의 상세 나란히 비교: IAUC80N04S6N036ATMA1 제조: Infineon 및 IAUCN04S6N009TATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUC80N04S6N036ATMA1 | IAUCN04S6N009TATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.86 | $1.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS-6 40 V | OptiMOS 6 40 V |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at T_C | 80 A | — |
| Power Dissipation (P_D) at T_C | 50 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 3.6 mOhm | — |
| On-Resistance R_DS(on) max at V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| 패키지 | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-LHDSO-10-2 (SSO10T) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55 C to +175 C | — |
| AEC-Q101 Qualification | Qualified (Automotive) | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | — |
| Terminal Finish | Tin (Sn) (e3 per JESD-609) | — |
| Peak Reflow Temperature | 260 C (per JEDEC J-STD-020) | — |
| Compliance - RoHS | Compliant | — |
| Compliance - REACH | Compliant | — |
| Part Number | — | IAUCN04S6N009T |
| Ordering Code (MPN) | — | IAUCN04S6N009TATMA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, at Tj) | — | 330 A |
| Power Dissipation (PD, at Tc) | — | 178 W |
| On-Resistance RDS(on) max | — | 0.9 mΩ |
| Technology | — | OptiMOS 6 trench MOSFET |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / RoHS | — | Yes / Compliant |
| Gate Threshold VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |