IAUCN04S7L019ATMA1 vs BSC059N04LS6ATMA1 비교
다음의 상세 나란히 비교: IAUCN04S7L019ATMA1 제조: Infineon 및 BSC059N04LS6ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUCN04S7L019ATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.48 | $0.74 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 7 | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 120 A | — |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical/max value] | — |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: Qg total/nominal value] | — |
| 패키지 | PG-TDSON-8-33 | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -55°C to +175°C (junction) | — |
| Power Dissipation (P<sub>D</sub>) | [DATA_NEEDED: Pd max at 25C] | — |
| 열 저항, 접합-주변 | [DATA_NEEDED: RthJA value] | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 1 | — |
| Packaging | Tape & Reel (13-inch reel) | — |
| Standard Pack Quantity | 5000 pieces | — |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") | — |
| Technology | — | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25C | — | 17 A |
| Continuous Drain Current (ID) at TC=25C | — | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | — | 59 A |
| On-Resistance RDS(on) max | — | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | — | 3 W |
| Total Power Dissipation at TC=25C | — | 38 W |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| 동작 온도 범위 | — | -55C to +150C |
| Diode Continuous Forward Current (IS) | — | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | — | 236 A at TC=25C |
| Lead-Free | — | Yes |