IAUCN04S7L050HATMA1 vs IAUCN04S7N006TATMA1 비교
다음의 상세 나란히 비교: IAUCN04S7L050HATMA1 제조: Infineon 및 IAUCN04S7N006TATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUCN04S7L050HATMA1 | IAUCN04S7N006TATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.83 | $2.66 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 7 | — |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID), Tc=25°C | 65 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) @ Tc=25°C | 40 W | — |
| 동작 접합 온도 | -55 °C to +175 °C | — |
| 패키지 | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS 상태 | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) | — |
| Technology | Trench MOSFET, OptiMOS™ 7 40V | OptiMOS 7 (shielded-gate trench) |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_j) | — | 425 A |
| Power Dissipation (P_D, T_C) | — | 205 W |
| R_DS(on) (typ, V_GS=10V) | — | 0.63 mΩ |
| 동작 온도 범위 | — | [DATA_NEEDED: Tj min/max] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G at V_GS=10V] |
| Automotive Grade | — | Yes (Infineon automotive MOSFET line) |
| Lead-Free | — | Yes |