IAUCN10S7L290TATMA1 vs IAUCN08S7N024ATMA1 비교

다음의 상세 나란히 비교: IAUCN10S7L290TATMA1 제조: Infineon 및 IAUCN08S7N024ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN10S7L290TATMA1 IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7L290TATMA1 ✓ 활성

사양 비교

파라미터 IAUCN10S7L290TATMA1 IAUCN08S7N024ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.36 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 7 —
트랜지스터 유형 N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 80 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25°C 27 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] —
On-Resistance RDS(on) max @ VGS=10V 28.6 mΩ —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 45 W —
동작 접합 온도 -55 °C to +175 °C —
패키지 PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled PG-TDSON-8-34 (8-pin, exposed pad)
실장 유형 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q101
MSL 레벨 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS Compliance Compliant Compliant
Lead-Free Yes —
Avalanche Rated Yes —
ESD Protection HBM Class 1C (per Infineon datasheet) —
Series — Automotive OptiMOS 7 (80 V)
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 165 A
Drain-Source On-Resistance (RDS(on)) max — 2.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Technology — OptiMOS 7 trench
동작 온도 범위 — -55C to +175C (typical automotive)
전력 손실 (Ptot) — [DATA_NEEDED: Ptot @ TC=25C]
Typical Application — 48 V automotive DC-DC, motor drive, load switch

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