IAUTN04S7N003ATMA1 vs IAUCN08S7L033ATMA1 비교

다음의 상세 나란히 비교: IAUTN04S7N003ATMA1 제조: Infineon 및 IAUCN08S7L033ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ 활성

사양 비교

파라미터 IAUTN04S7N003ATMA1 IAUCN08S7L033ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.42 $0.86
Technology OptiMOS 7 N-Channel Trench MOSFET OptiMOS 7 trench MOSFET
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID) at Tj 350 A 130 A
Power Dissipation (PD) at Tc=25°C 357 W 118 W
RDS(on) max at VGS=10V 0.24 mOhm (typical) —
Gate-Source Voltage (VGS) max ±20 V ±20 V (typical Infineon OptiMOS 7 limit)
Avalanche Single-Pulse Current [DATA_NEEDED: IAS] —
Body Diode Continuous Forward Current 350 A (Tj = 25 °C) —
Body Diode Pulse Current 3510 A (tp = 100 µs, Tj = 25 °C) —
Body Diode Forward Voltage (VSD) 0.95 V max (0.8 V typ) at IS = 100 A —
Reverse Recovery Time (trr) 83 ns typical / 125 ns max —
Reverse Recovery Charge (Qrr) 126 nC typical / 252 nC max —
동작 온도 범위 -55 °C to +175 °C (Tj) -55°C to +175°C (TJ)
패키지 PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) PG-TDSON-8-34 (SSO8, 5x6 mm²)
실장 유형 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS 상태 Compliant Compliant
MSL 레벨 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, typical for this package)
Manufacturer — Infineon Technologies
Series — Automotive OptiMOS 7
트랜지스터 유형 — N-Channel MOSFET
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Qualification — Automotive Grade (per Infineon datasheet header)

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