IAUZN04S7L030ATMA1 vs IAUC60N04S6N044ATMA1 비교

다음의 상세 나란히 비교: IAUZN04S7L030ATMA1 제조: Infineon 및 IAUC60N04S6N044ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IAUZN04S7L030ATMA1 IAUC60N04S6N044ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.36 $0.98
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
패키지 PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8 (5x6 mm) with exposed pad
실장 유형 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) AEC-Q101 qualified (IAUC prefix)
RoHS Compliance Compliant —
MSL 레벨 [DATA_NEEDED: MSL rating] 1 (unlimited)
Technology — OptiMOS-6 N-channel trench MOSFET
Drain-Source Voltage (V_DS) — 40 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at Tc=25°C — 60 A
Continuous Drain Current (I_D) at Tc=100°C — [DATA_NEEDED: pulsed/current derated value]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max @ V_GS=10V — 4.4 mΩ
On-Resistance R_DS(on) max @ V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
Total Gate Charge (Q_g) — [DATA_NEEDED: typical gate charge]
Power Dissipation (P_D) at Tc=25°C — 42 W
동작 접합 온도 — -55°C to +175°C
RoHS 상태 — Compliant
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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