IDTADC1210S065HN-C18 vs IDTADC1210S125HN-C18 비교
다음의 상세 나란히 비교: IDTADC1210S065HN-C18 제조: Renesas Electronics 및 IDTADC1210S125HN-C18 제조: Renesas Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Renesas Electronics
IDTADC1210S065HN-C18 - 12-bit 65 MSPS ADC | Renesas (IDT)
IDTADC1210S065HN-C18 NrndRenesas Electronics
IDTADC1210S125HN-C18 - 12-bit 125 MSPS ADC, 40-VFQFPN | Renesas
IDTADC1210S125HN-C18 ✓ 활성사양 비교
| 파라미터 | IDTADC1210S065HN-C18 | IDTADC1210S125HN-C18 |
|---|---|---|
| 브랜드 | Renesas Electronics | Renesas Electronics |
| 카테고리 | ADC/DAC | ADC/DAC |
| 수명 주기 상태 | NRND | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $10.05 | $15.90 |
| 분해능 | 12 bit | 12 bit |
| Number of Channels | 1 | 1 |
| 샘플링 속도 | 65 MSPS | 125 MSPS |
| Architecture | Pipelined | Pipelined |
| Analog Supply Voltage (VDDA) | 3.0 V typical (3.9 V abs max) | 3 V (typical) |
| Digital Output Supply (VDDO) | 1.8 V to 3.3 V | — |
| Output Interface | CMOS parallel or LVDS DDR (selectable) | — |
| Input Type | Single-ended analog input (switched-capacitor) | Single-ended (differential internal) |
| Operating Ambient Temperature | -40C to +85C | — |
| Junction Temperature (max) | 125C | — |
| Storage Temperature | -55C to +125C | — |
| 패키지 | 40-pin HVQFN (6x6 mm) with exposed thermal pad | 40-VFQFPN (6x6 mm) with exposed thermal pad |
| 실장 유형 | Surface Mount | Surface Mount |
| Control Mode | Pin-control (CS held HIGH at power-up) and SPI serial | — |
| RoHS 상태 | Compliant (per Renesas/IDT product family) | [DATA_NEEDED: RoHS compliance flag] |
| Manufacturer | — | Renesas Electronics (formerly IDT) |
| Part Number | — | IDTADC1210S125HN-C18 |
| Product Type | — | Analog-to-Digital Converter (ADC) |
| Digital Supply Voltage (VDDO) | — | 1.8 V (typical) |
| Digital Output | — | CMOS or LVDS DDR (selectable) |
| Operating Temperature (Tamb) | — | -40 °C to +85 °C |
| Storage Temperature (Tstg) | — | -55 °C to +125 °C |
| Junction Temperature (Tj) | — | 125 °C max |
| Output Voltage Range (D[11:0]) | — | 0.4 V to +3.9 V |