IGI60L5050B1MXUMA1 vs IGI60L1414B1MXUMA1 비교

다음의 상세 나란히 비교: IGI60L5050B1MXUMA1 제조: Infineon 및 IGI60L1414B1MXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IGI60L1414B1MXUMA1 IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 ✓ 활성

사양 비교

파라미터 IGI60L5050B1MXUMA1 IGI60L1414B1MXUMA1
브랜드 Infineon Infineon
카테고리 MOSFETs Transistors
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.85 $4.55
Technology GaN (Gallium Nitride), enhancement-mode GaN (Gallium Nitride), enhancement-mode
Configuration Half-bridge (high-side + low-side switch with integrated gate driver) Half-bridge (high-side + low-side switch)
Drain-Source Voltage (VDS) 600 V 600 V
On-State Resistance (RDS(on)) per switch 500 mΩ (0.5 Ω) —
Number of GaN Switches 2 —
Gate Driver Source Current +0.29 A —
Gate Driver Sink Current -0.7 A —
Integrated Bootstrap Diode Yes (ultra-fast, low-resistance) —
Turn-on / Turn-off dV/dt Application-configurable (via gate resistor) —
패키지 PG-TFLGA-27-2 (TFLGA-27), 6x8 mm PG-TFLGA-27-2
핀 수 27 —
실장 유형 Surface Mount Surface Mount
동작 온도 -40 °C to +125 °C (junction 150 °C) [DATA_NEEDED: operating temperature range]
RoHS 상태 Compliant Compliant
Reach Status Compliant —
Lead-Free Yes —
Target Applications Totem-pole PFC, LLC converters, HF SMPS, BLDC drives —
Manufacturer — Infineon Technologies
Series — CoolGaN™ (IGI family)
Continuous Drain Current (ID) — 6.0 A
On-Resistance (RDS(on)) — 140 mΩ (per switch)
Gate Driver — Integrated (high-side + low-side)
Level Shifter — Integrated high-voltage level shifter
Bootstrap Diode — Integrated ultra-fast low-resistance
Source Drive Current — +0.29 A
Sink Drive Current — -0.7 A
Turn-On/Turn-Off — Application-configurable (external Rg)
Application Category — SMPS, PFC, motor drive, Class-D audio

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