IHW40N120R5XKSA1 vs IGW40N120H3FKSA1 비교

다음의 상세 나란히 비교: IHW40N120R5XKSA1 제조: Infineon 및 IGW40N120H3FKSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ 활성

사양 비교

파라미터 IHW40N120R5XKSA1 IGW40N120H3FKSA1
브랜드 Infineon Infineon
카테고리 IGBTs IGBTs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.50 $4.07
Collector-Emitter Voltage (VCE) 1200 V —
Continuous Collector Current (IC, TC=25C) 80 A —
Pulsed Collector Current (ICM) 160 A —
Maximum Power Dissipation (Ptot) 394 W —
Gate-Emitter Voltage (VGE) +/-20 V —
VCE(sat) at IC=40A, VGE=15V, Tj=25C [DATA_NEEDED: typical VCE(sat) value] —
Integrated Anti-Parallel Diode Yes (monolithic reverse-conducting) —
Technology Trench Field Stop, Reverse-Conducting RC-H5 —
패키지 TO-247-3 (PG-TO247-3) through-hole —
실장 유형 Through Hole Through Hole
동작 접합 온도 -40C to +175C —
Storage Temperature -55C to +150C —
Soldering Temperature (max 10s) 260 C —
Switching Application Resonant / soft switching (induction cooking optimized) —
RoHS Compliance Compliant —
할로겐 프리 Yes —
MSL 레벨 N/A (through-hole) —
Manufacturer — Infineon Technologies
Series — TRENCHSTOP™ IGBT3
IGBT Type — Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) — 1200 V
Current - Collector (Ic) Max — 80 A
Current - Collector Pulsed (Icm) — 160 A
Power - Max — 483 W
Gate Charge (Qg) — 185 nC
Input Type — Standard
Operating Temperature (TJ) — -40 °C to +175 °C
패키지 / 케이스 — PG-TO247-3-1 (TO-247-3)
Packaging — Tube
RoHS 상태 — [DATA_NEEDED: RoHS compliance status]
Continuous Collector Current (Ic) — 40 A (per Infineon product page)

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