IKD15N60RATMA1 vs IKD15N60RFATMA1 비교

다음의 상세 나란히 비교: IKD15N60RATMA1 제조: Infineon 및 IKD15N60RFATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 ✓ 활성

사양 비교

파라미터 IKD15N60RATMA1 IKD15N60RFATMA1
브랜드 Infineon Infineon
카테고리 IGBTs IGBTs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.22 $1.35
트랜지스터 유형 IGBT - Trench Field Stop with integrated diode —
Collector-Emitter Voltage (VCES) 600 V 600 V
Continuous Collector Current (IC, TC=100C) 30 A —
Pulsed Collector Current (ICM, tp=1ms) [DATA_NEEDED: pulsed ICM value] —
Total Power Dissipation (Ptot, TC=25C) 250 W —
컬렉터-이미터 포화 전압 (Vce(sat)) 1.65 V (typical, VGE=15V, IC=15A) —
Gate-Emitter Threshold Voltage (VGE(th)) 2.1 V (VCE=VGE, IC=15A) —
Gate Charge (Qg) 90 nC (typical) —
Turn-On Delay / Fall Time (td(on)/tf) 16 ns / 183 ns (typical) —
동작 접합 온도 -40 C to +175 C -40C to +175C
패키지 PG-TO252-3 (DPAK), surface mount PG-TO252-3 (DPAK), 3 pins (2 + tab)
실장 유형 Surface Mount Surface Mount
Integrated Diode Yes (anti-parallel, co-packaged) —
RoHS 상태 Compliant —
Gate Drive Voltage (recommended) 15 V —
Technology — TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode)
Continuous Collector Current (IC at TC=25C) — 30 A
Continuous Collector Current (IC at TC=100C) — 15 A
Pulsed Collector Current (ICM) — [DATA_NEEDED: ICM value]
Gate-Emitter Voltage (VGES) — +/-20 V
Gate-Emitter Threshold (VGE(th)) — [DATA_NEEDED: VGE(th) typical value]
VCE(sat) at IC=15A, VGE=15V — 1.5 V (typical)
Maximum Power Dissipation (Ptot) — 250 W
Integrated Anti-Parallel Diode — Yes (RC-Drives Fast, co-packaged)
Switching Speed Class — Hard-switching, RC-Drives Fast
Target Application — Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives)
RoHS Compliance — Compliant

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