IMLT40R011M2HXTMA1 vs IMLT65R040M2HXTMA1 비교

다음의 상세 나란히 비교: IMLT40R011M2HXTMA1 제조: Infineon 및 IMLT65R040M2HXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IMLT40R011M2HXTMA1 IMLT65R040M2HXTMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $12.80 $4.25
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC MOSFET 400V G2 CoolSiC™ G2 (2nd generation SiC trench)
트랜지스터 유형 N-Channel SiC MOSFET —
Drain-Source Voltage (VDS) 400 V 650 V
Continuous Drain Current (ID, Tc) 144 A —
Power Dissipation (PD, Tc) 429 W —
On-State Resistance (RDS(on)) 11 mΩ (typ) —
Gate Threshold Voltage (VGS(th)) 4.5 V (benchmark) —
Recommended Gate Drive Voltage 0 V to 18 V —
Technology Silicon Carbide (SiC) Gen-2 Silicon Carbide (SiC) N-channel MOSFET
Body Diode Commutation-robust fast body diode, low Qrr —
Avalanche Rating 100% avalanche tested —
패키지 PG-HDSOP-16-8 (surface mount, top-side cooled) PG-HDSOP-16-6 (surface mount, top-side-cooled)
실장 유형 Surface Mount Surface Mount
Interconnection Technology XT (best-in-class thermal performance) —
Operating Mode Enhancement mode —
Target Topologies 2- and 3-level hard- and soft-switching —
Target Applications AI server PSU, SMPS, motor drives —
RoHS 상태 Compliant —
Continuous Drain Current (ID, TC) — 57 A
Pulsed Drain Current (ID,pulse) — 143 A
On-State Resistance RDS(on) (typ, VGS=18V) — 40 mΩ
On-State Resistance RDS(on) (max, VGS=18V) — 49 mΩ
Total Gate Charge QG — 28 nC
Output Charge QOSS @ 400 V — 53 nC
Output Energy EOSS @ 400 V — 7.2 µJ
Continuous Drain Power Dissipation (PD, TC) — 268 W
Recommended Gate Drive Voltage VGS — 18 V (turn-off: 0 V or negative)
동작 접합 온도 — -55 °C to +150 °C
Qualification — JEDEC industrial
Packaging — Tape & Reel
Special Features — Kelvin source pin, low reverse-recovery charge, hard-switching optimized

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