IPB020N08N5ATMA1 vs BSC028N06NSTATMA1 비교

다음의 상세 나란히 비교: IPB020N08N5ATMA1 제조: Infineon 및 BSC028N06NSTATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPB020N08N5ATMA1 IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 ✓ 활성

사양 비교

파라미터 IPB020N08N5ATMA1 BSC028N06NSTATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.45 $0.40
Technology OptiMOS 5 (N-channel trench MOSFET) MOSFET N-Channel (OptiMOS 5)
Drain-Source Voltage (VDS) 80 V 60 V
Continuous Drain Current (ID) at Tc=25C 120 A —
Pulsed Drain Current (IDM) 480 A —
Maximum RDS(on) at VGS=10V 2.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (PD) at Tc=25C 300 W —
동작 접합 온도 -55C to +175C -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value, approx 0.5 C/W] —
패키지 PG-TO263-3 (D2PAK-2) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
실장 유형 Surface Mount Surface Mount
Avalanche Energy Rated (EAS) [DATA_NEEDED: EAS value] —
Configuration Single N-channel, 3-pin (2+Tab) —
RoHS 상태 Compliant Compliant
MSL 레벨 [DATA_NEEDED: MSL level] 1
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Part Number Base — BSC028N06NS
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
할로겐 프리 — Yes
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

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