IPB021N10NM5LF2ATMA1 vs IPT008N06NM5LFATMA1 비교
다음의 상세 나란히 비교: IPB021N10NM5LF2ATMA1 제조: Infineon 및 IPT008N06NM5LFATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ 활성사양 비교
| 파라미터 | IPB021N10NM5LF2ATMA1 | IPT008N06NM5LFATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.75 | $5.40 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Linear FET 2 | OptiMOS 5 / Linear FET |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 176 A | — |
| Continuous Drain Current (I_D) at T_A=25°C | 30 A | — |
| R_DS(on) Maximum | 2.1 mΩ | — |
| Gate-Source Voltage (V_GS) Maximum | ±20 V [DATA_NEEDED: absolute max rated V_GS] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | — |
| Power Dissipation (P_D) at T_C=25°C | 375 W | — |
| Power Dissipation (P_D) at T_A=25°C | 3.8 W | — |
| 동작 온도 범위 | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55 °C to +175 °C (TJ) |
| 패키지 | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-HSOF-8 (single, flat-lead) |
| 실장 유형 | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | — |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | Trench MOSFET (OptiMOS 5) |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | 1 (per JEDEC J-STD-020) |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 454 A |
| 펄스 드레인 전류 | — | [DATA_NEEDED: pulsed ID] |
| On-Resistance RDS(on) at VGS=10 V | — | 0.8 mΩ |
| Gate-Source Threshold Voltage VGS(th) | — | 3.6 V (typ, 250 µA test) |
| Power Dissipation (Tc) | — | 278 W |
| Gate Drive (recommended) | — | 10 V (logic-level compatible above 4.5 V VGS) |
| REACH Status | — | Compliant |
| AEC-Q100 | — | not_qualified (industrial-grade by default) |