IPC100N04S5L1R5ATMA1 vs IAUCN04S7N015GATMA1 비교

다음의 상세 나란히 비교: IPC100N04S5L1R5ATMA1 제조: Infineon 및 IAUCN04S7N015GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ 활성
Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ 활성

사양 비교

파라미터 IPC100N04S5L1R5ATMA1 IAUCN04S7N015GATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.18 $2.21
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 40 V OptiMOS 7
Polarity / Channel Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) Max 40 V —
Gate-Source Voltage (VGS) Max 20 V —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation (PD) at Tc=25C 115 W —
On-Resistance RDS(on) at VGS=10 V 1.5 mOhm (typ) —
On-Resistance RDS(on) at VGS=4.5 V 1.8 mOhm (typ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ] —
동작 온도 범위 -55C to +175C —
패키지 PG-TDSON-8-34 (SS08 leadless) PG-THSOG-4-1 (SSO4G 5x6) surface mount
실장 유형 Surface Mount Surface Mount (IMS-compatible source-down)
MSL 레벨 MSL1 (260C peak reflow) 1 (per JEDEC J-STD-020)
AEC-Q101 Qualified Yes —
RoHS 상태 Compliant (Green Product) Compliant
Avalanche Tested 100% —
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 165 A (Tc)
Power Dissipation (P_D) — 96 W (Tc)
R_DS(on) max — 1.53 mΩ at V_GS=10 V
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
동작 접합 온도 — -55C to +175C
Automotive Qualification — AEC-Q101 qualified
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]

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