IPD068N10N3GATMA1 vs BSF134N10NJ3GXUMA1 비교
다음의 상세 나란히 비교: IPD068N10N3GATMA1 제조: Infineon 및 BSF134N10NJ3GXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPD068N10N3GATMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.65 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD068N10N3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel, Enhancement Mode) | Trench-gate OptiMOS planar |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| On-Resistance RDS(on) max | 6.8 mOhm | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V (typical) | — |
| 패키지 | PG-TO252-3 (DPAK, 2 leads + tab) | MG-WDSON-2 (CanPAK M) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 접합 온도 | -55 C to +175 C | — |
| Channel Type | N-Channel | — |
| Configuration | Single | Single with built-in diode |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 1 | [DATA_NEEDED: MSL rating] |
| Packing | Tape & Reel (T/R) | — |
| Qualification | Industrial (non-automotive) | — |
| Series | — | OptiMOS 100 V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 9 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| Power Dissipation (PD) at TA=25°C | — | 2.2 W |
| Power Dissipation (PD) at TC=25°C | — | 43 W |
| Terminal Position | — | Bottom |
| Terminal Finish | — | Silver Nickel |
| 동작 온도 범위 | — | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | — | [DATA_NEEDED: trr value] |