IPD068P03L3GATMA1 vs IPC90N04S5L3R3ATMA1 비교

다음의 상세 나란히 비교: IPD068P03L3GATMA1 제조: Infineon 및 IPC90N04S5L3R3ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPD068P03L3GATMA1 IPD068P03L3GATMA1 - 30V P-Ch OptiMOS MOSFET, 70A | Infineon

IPD068P03L3GATMA1 - 30V P-Ch OptiMOS MOSFET, 70A | Infineon

IPD068P03L3GATMA1 ✓ 활성

사양 비교

파라미터 IPD068P03L3GATMA1 IPC90N04S5L3R3ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.51 $0.96
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS P-Channel Power MOSFET OptiMOS 5 40V
Polarity / Channel Type P-Channel —
Drain-Source Voltage (V_DS) -30 V —
Continuous Drain Current (I_D) at T_C -70 A —
Pulsed Drain Current (I_D,pulse) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at T_C 100 W —
R_DS(on) max at V_GS=-10V 0.005 ohm (typical) —
Gate-Source Threshold Voltage (V_GS(th)) -1.0 V to -2.2 V —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
동작 온도 범위 -55C to +175C (junction) —
패키지 PG-TO252-3 (DPAK) PG-TDSON-8-34 (TDSON-8)
실장 유형 Surface Mount Surface Mount
Channel Mode Enhancement —
RoHS 상태 Compliant —
MSL 레벨 1 (unlimited floor life at <30C/85% RH) —
Technology Trench MOSFET (OptiMOS) —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
동작 접합 온도 — -55°C to +175°C
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified
Avalanche Tested — 100% (production-level)
RoHS Compliance — Compliant (Green Product)

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