IPD30N06S2L13ATMA4 vs IPD35N10S3L26ATMA1 비교

다음의 상세 나란히 비교: IPD30N06S2L13ATMA4 제조: Infineon 및 IPD35N10S3L26ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPD30N06S2L13ATMA4 IPD35N10S3L26ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.48 $0.81
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS —
Channel Type N-Channel —
Mode Enhancement —
Drain-Source Voltage (Vds) 55 V —
Continuous Drain Current (Id) 30 A (Tc) —
Power Dissipation (Pd) 136 W (Tc) —
패키지 PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK-2)
실장 유형 Surface Mount Surface Mount
동작 온도 -55 °C to +175 °C (Tj) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) —
Lead-Free / RoHS Yes (Green Package) —
Avalanche Tested 100 % production-tested 100% avalanche tested
Technology Planar (OptiMOS) OptiMOS-T (N-channel enhancement mode trench MOSFET)
On-State Resistance (Rds(on)) [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] —
Gate-Source Threshold (Vgs(th)) Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typ at Vds=25V] —
Diode Reverse Recovery (trr) [DATA_NEEDED: trr typ] —
핀 수 3 (Drain tab + Gate + Source) —
Tape and Reel Packaging Yes (T&R per IEC 60286-3) —
Part Number — IPD35N10S3L26ATMA1
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 35 A
Pulsed Drain Current (IDM) — 180 A
On-Resistance RDS(on) max at VGS=10 V — 26 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.7 V
Continuous Power Dissipation (PD) at TC=25°C — 71 W
동작 접합 온도 — -55°C to +175°C
MSL 레벨 — MSL1 (up to 260°C peak reflow)
RoHS / Halogen-Free — RoHS compliant, Green product (halogen-free)
Typical Gate Charge (Qg) — [DATA_NEEDED: typical Qg from datasheet]

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