IPD60R380C6ATMA1 vs BSC027N06LS5ATMA1 비교

다음의 상세 나란히 비교: IPD60R380C6ATMA1 제조: Infineon 및 BSC027N06LS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ 활성

사양 비교

파라미터 IPD60R380C6ATMA1 BSC027N06LS5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.41 $0.66
Drain-Source Voltage (VDS) 600 V 60 V
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] Logic-level
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction MOSFET (Metal Oxide)
FET Type N-Channel N-Channel
패키지 PG-TO252-3 (DPAK) —
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL level] —
RoHS 상태 Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Manufacturer — Infineon Technologies
Series — OptiMOS™ 5
Part Status — Active
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at Tc=25°C — 100 A
Continuous Drain Current (ID) at Tc=100°C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
On-Resistance (RDS(on)) max @ VGS=10V — 2.7 mOhm
On-Resistance (RDS(on)) @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Tc=25°C — 83 W
동작 온도 범위 — -55°C to +150°C
패키지 / 케이스 — PG-TDSON-8-7 (SuperSO8 5x6)
핀 수 — 8
Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Avalanche Energy Rated — Yes
MSL (Moisture Sensitivity Level) — MSL1

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