IPG20N04S4L07ATMA1 vs BSC018N04LSGATMA1 비교
다음의 상세 나란히 비교: IPG20N04S4L07ATMA1 제조: Infineon 및 BSC018N04LSGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPG20N04S4L07ATMA1 | BSC018N04LSGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.65 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ T2 | OptiMOS 3 |
| FET Type | 2x N-Channel (Dual, Independent) | N-Channel |
| Drain-to-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 20 A | — |
| RDS(on) Max @ VGS=10V | 7.2 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation (PD) Max | 65 W | — |
| 동작 접합 온도 | -55°C to +175°C | — |
| 패키지 | PG-TDSON-8-4 (TDSON-8-4) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (4.5V VGS fully enhanced) | — |
| MSL 레벨 | MSL1 (per JEDEC J-STD-020, 260°C peak reflow) | — |
| AEC-Q101 Qualification | Qualified | — |
| Avalanche Tested | 100% (per datasheet) | 100% (per datasheet) |
| RoHS / Lead-Free | RoHS compliant, lead-free terminations | — |
| Technology | — | MOSFET (Metal Oxide) |
| Continuous Drain Current (ID) @ TC=25°C | — | 100 A |
| Continuous Drain Current (ID) @ TA=25°C | — | 30 A |
| Power Dissipation (PD) @ TC=25°C | — | 125 W |
| Power Dissipation (PD) @ TA=25°C | — | 2.5 W |
| RDS(on) Max @ VGS=10 V | — | 1.8 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 4.5 V, 10 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| 동작 온도 범위 | — | -55°C to +150°C (TJ) |
| RoHS 상태 | — | Compliant (Pb-free plating) |
| JEDEC Qualification | — | Yes (qualified per JEDEC for target applications) |