IPG20N04S4L07ATMA1 vs IPD50N03S4L06ATMA1 비교

다음의 상세 나란히 비교: IPG20N04S4L07ATMA1 제조: Infineon 및 IPD50N03S4L06ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 ✓ 활성

사양 비교

파라미터 IPG20N04S4L07ATMA1 IPD50N03S4L06ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.65 $0.49
Manufacturer Infineon Technologies —
Series OptiMOS™ T2 —
FET Type 2x N-Channel (Dual, Independent) N-Channel, Enhancement Mode
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 20 A —
RDS(on) Max @ VGS=10V 7.2 mΩ (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge at VGS=10V] —
Power Dissipation (PD) Max 65 W —
동작 접합 온도 -55°C to +175°C -55 C to +175 C
패키지 PG-TDSON-8-4 (TDSON-8-4) PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount
실장 유형 Surface Mount Surface Mount
Logic-Level Gate Drive Yes (4.5V VGS fully enhanced) —
MSL 레벨 MSL1 (per JEDEC J-STD-020, 260°C peak reflow) MSL1 (up to 260 C peak reflow)
AEC-Q101 Qualification Qualified —
Avalanche Tested 100% (per datasheet) —
RoHS / Lead-Free RoHS compliant, lead-free terminations —
Drain-Source Voltage (V_DS) — 30 V
Continuous Drain Current (I_D, Tc) — 50 A
On-State Resistance (R_DS(on) max) — 5.5 mOhm at V_GS = 10 V
Gate Threshold Voltage (V_GS(th) typ) — 2.2 V
Total Gate Charge (Q_g) — 31 nC at V_GS = 10 V
Input Capacitance (C_iss) — 2.33 nF
Output Capacitance (C_oss) — 600 pF
Reverse Transfer Capacitance (C_rss) — 34 pF
Power Dissipation (P_D) — 56 W at Tc = 25 C
Automotive Qualification — AEC-Q101
Avalanche Rating — 100% Avalanche Tested
RoHS 상태 — Compliant (Green Package)

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