IPG20N10S436AATMA1 vs IPB17N25S3100ATMA1 비교

다음의 상세 나란히 비교: IPG20N10S436AATMA1 제조: Infineon 및 IPB17N25S3100ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPB17N25S3100ATMA1 IPB17N25S3100ATMA1 - 250V 17A N-Channel MOSFET | Infineon

IPB17N25S3100ATMA1 - 250V 17A N-Channel MOSFET | Infineon

IPB17N25S3100ATMA1 ✓ 활성

사양 비교

파라미터 IPG20N10S436AATMA1 IPB17N25S3100ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.68 $1.84
Configuration Dual N-Channel (2 Elements with Built-in Diode) —
Drain-Source Voltage (VDS) 100 V 250 V
Continuous Drain Current (ID) 20 A (per channel) —
Total Power Dissipation (PD) 43 W —
Operating Mode Enhancement Mode —
패키지 PG-TDSON-8-10 (Wettable Flank) PG-TO263-3-2 (D2PAK-2)
실장 유형 Surface Mount Surface Mount
Operating Temperature (TJ max) +175 C —
JESD-609 Code e3 —
MSL 레벨 MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% —
AOI Compatible Yes (Wettable Flank) —
RoHS 상태 Compliant (Green Product) Compliant (Green Product)
Channel Type N-Channel Normal Level —
Manufacturer — Infineon Technologies
Part Number — IPB17N25S3100ATMA1
트랜지스터 유형 — N-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) at Tc — 17 A
Pulsed Drain Current (IDM) — 64 A
Drain-Source On-Resistance (RDS(on)) — 100 mOhm max @ VGS = 10 V
Typical RDS(on) — 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral)
Gate-Source Voltage (VGS) — +/-20 V
Gate Threshold Voltage (VGS(th)) — 4 V
Total Gate Charge (Qg) — 19 nC @ VGS = 10 V
Input Capacitance (Ciss) — 1.5 nF
Output Capacitance (Coss) — 23 pF
Reverse Transfer Capacitance (Crss) — 625 pF
Power Dissipation (PD) — 107 W at Tc = 25 C
동작 온도 범위 — -55 C to +175 C
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 C peak reflow)
AEC-Q101 Qualification — Qualified (automotive grade)
Avalanche Rated — 100% avalanche tested

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