IPG20N10S4L22AATMA1 vs IPC100N04S5L1R5ATMA1 비교

다음의 상세 나란히 비교: IPG20N10S4L22AATMA1 제조: Infineon 및 IPC100N04S5L1R5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPG20N10S4L22AATMA1 IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΩ MOSFET | Infineon

IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΩ MOSFET | Infineon

IPG20N10S4L22AATMA1 ✓ 활성
Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ 활성

사양 비교

파라미터 IPG20N10S4L22AATMA1 IPC100N04S5L1R5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.45 $1.18
FET Type Dual N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) 20 A —
On-State Resistance (R<sub>DS(on)</sub>) 22 mΩ (typical) —
Power Dissipation (P<sub>D</sub>) 60 W —
Gate-Source Voltage (V<sub>GS</sub>) ±20 V —
Gate Threshold (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th)] —
실장 유형 Surface Mount Surface Mount
패키지 PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-34 (SS08 leadless)
Lead Configuration Wettable Flank —
Automotive Qualification AEC-Q101 —
Technology OptiMOS T2 —
동작 온도 -55°C to +175°C —
RoHS 상태 Compliant Compliant (Green Product)
Channel Count 2 (dual independent) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-5 40 V
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
동작 온도 범위 — -55C to +175C
MSL 레벨 — MSL1 (260C peak reflow)
AEC-Q101 Qualified — Yes
Avalanche Tested — 100%

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