IQE008N03LM5ATMA1 vs BSC027N06LS5ATMA1 비교

다음의 상세 나란히 비교: IQE008N03LM5ATMA1 제조: Infineon 및 BSC027N06LS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ 활성

사양 비교

파라미터 IQE008N03LM5ATMA1 BSC027N06LS5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.94 $0.66
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25°C 27 A —
Continuous Drain Current (ID) at TC=25°C 253 A —
On-Resistance RDS(on) Typical 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) —
Gate Threshold Voltage (VGS(th)) 2 V (at 250 µA per LCSC snippet) Logic-level
Power Dissipation at TA=25°C 2.1 W —
Power Dissipation at TC=25°C 89 W —
패키지 PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down —
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55°C to +150°C (typical MOSFET junction rating) -55°C to +150°C
Gate-Source Voltage (VGS) Max ±20 V (typical MOSFET rating) —
Technology OptiMOS 5, Source-Down MOSFET (Metal Oxide)
RoHS 상태 Compliant (per LCSC listing) Compliant
MSL 레벨 [DATA_NEEDED: MSL level] —
Series — OptiMOS™ 5
Part Status — Active
FET Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at Tc=25°C — 100 A
Continuous Drain Current (ID) at Tc=100°C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
On-Resistance (RDS(on)) max @ VGS=10V — 2.7 mOhm
On-Resistance (RDS(on)) @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Tc=25°C — 83 W
패키지 / 케이스 — PG-TDSON-8-7 (SuperSO8 5x6)
핀 수 — 8
Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Avalanche Energy Rated — Yes
MSL (Moisture Sensitivity Level) — MSL1

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