IQE008N03LM5CGSCATMA1 vs IQE012N03LM5CGATMA1 비교
다음의 상세 나란히 비교: IQE008N03LM5CGSCATMA1 제조: Infineon 및 IQE012N03LM5CGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IQE008N03LM5CGSCATMA1 | IQE012N03LM5CGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.10 | $1.38 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| 동작 온도 범위 | -55C to +150C (junction) | — |
| 패키지 | PG-WHTFN-9 (WHTFN) | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) |
| 실장 유형 | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| Polarity | N-Channel | — |
| 핀 수 | 9 (WHTFN with exposed thermal pads) | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | 1 |
| RoHS 상태 | Compliant | Compliant |
| 할로겐 프리 | Yes (Infineon standard for OptiMOS 5) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, Ta) | — | 34 A |
| Pulsed Drain Current (IDM, Tc) | — | 224 A |
| On-Resistance RDS(on), typ | — | 1.20 mOhm |
| Gate-Source Threshold VGS(th) | — | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| Technology / Process | — | OptiMOS 5 trench |
| 동작 온도 | — | -55 C to +150 C (TJ) |
| Gate Drive (recommended) | — | 10 V (logic-level compatible) |