IR2104STRPBF vs FAN7392MX 비교

다음의 상세 나란히 비교: IR2104STRPBF 제조: Infineon 및 FAN7392MX 제조: onsemi. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

onsemi
FAN7392MX FAN7392MX - 600V 3A Half-Bridge Gate Driver | onsemi

FAN7392MX - 600V 3A Half-Bridge Gate Driver | onsemi

FAN7392MX ⚠ 최종 구매

사양 비교

파라미터 IR2104STRPBF FAN7392MX
브랜드 Infineon onsemi
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 최종 구매
재고 상태 In Stock In Stock
단가 (USD) $0.59 $1.16
Product Type Half-Bridge Gate Driver IC —
Configuration High-side and low-side referenced output channels —
출력 수 2 (high-side + low-side) —
Offset Voltage (High-Side, Max) 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source Current (typ) 0.21 A —
Output Sink Current (typ) 0.36 A —
Rise Time (typ) 100 ns —
Fall Time (typ) 50 ns —
Propagation Delay (typ) 680 ns —
Turn-On Propagation Delay (typ) 150 ns —
Turn-Off Propagation Delay (typ) 130 ns —
Quiescent Current (VCC/VBS, typ) 150 uA —
Input Logic Compatibility 3.3 V, 5 V, 15 V logic —
Shutdown Pin Yes (active-low shutdown input) —
Undervoltage Lockout Yes (VCC and VBS) —
Cross-Conduction Prevention Yes (matched propagation delay) —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
동작 온도 범위 -40 C to +150 C —
패키지 8-SOIC (SOIC-8) 16-SOIC (M1X suffix, wide-body)
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant
Driver Type — Half-Bridge (high-side + low-side)
Number of Drivers — 2
Channel Type — Independent
Driven Configuration — Half-Bridge
Gate Type — IGBT, N-Channel MOSFET
Input Type — Non-Inverting
High-Side Floating Supply Voltage — up to 625 V (600V operating)
Logic Voltage VIL / VIH — 4.5 V / 9.5 V (relative to VDD)
Logic Compatibility — 3.3V / 5V input
Supply Voltage VDD — 10 V to 20 V
Peak Output Current (Source / Sink) — 3 A / 3 A
Rise Time (typ.) — [DATA_NEEDED: rise/fall time ns]
Fall Time (typ.) — [DATA_NEEDED: rise/fall time ns]
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay ns]
Bootstrap Diode — Integrated
SD (Shutdown) Pin — Yes
UVLO — VDD and VBS under-voltage lockout
동작 온도 — -40C to +125C

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