IRF5210PBF vs IPB90N06S4L04ATMA2 비교
다음의 상세 나란히 비교: IRF5210PBF 제조: Infineon 및 IPB90N06S4L04ATMA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF5210PBF | IPB90N06S4L04ATMA2 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.82 | $0.94 |
| 트랜지스터 유형 | P-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | -100 V | — |
| Continuous Drain Current (Id) at Tc | -40 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Threshold Voltage (Vgs(th)) | -2 V to -4 V (typical -2 V) | — |
| On-Resistance Rds(on) at Vgs=-10V | 60 milliohms | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (Pd) at Tc | 200 W | — |
| 동작 온도 범위 | -55 C to +175 C (junction) | -55 °C to +175 °C |
| 패키지 | TO-220AB (through-hole) | PG-TO263-3-2 (D2PAK) |
| 실장 유형 | Through Hole | Surface Mount |
| Technology | HEXFET (Fifth Generation) | OptiMOS T2, N-channel enhancement mode |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Tab Connection | Electrically tied to Drain | — |
| Pin Configuration | Gate / Drain (tab) / Source (G-D-S, front view) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB90N06S4L04ATMA2 |
| Drain-Source Voltage (V_DSS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 90 A |
| Pulsed Drain Current (I_D,pulse) | — | 360 A |
| Power Dissipation (P_D, Tc) | — | 150 W |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | — | 3.4 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th)] |
| Gate-Source Voltage (V_GS) | — | ±20 V |
| MSL 레벨 | — | MSL1 (unlimited floor life) |
| Peak Reflow Temperature | — | 260 °C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Tested | — | 100% avalanche-tested |
| RoHS / Halogen-Free | — | Yes (Green Product) |