IRF5305STRLPBF vs IRFR5305TRLPBF 비교

다음의 상세 나란히 비교: IRF5305STRLPBF 제조: Infineon 및 IRFR5305TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ 활성

사양 비교

파라미터 IRF5305STRLPBF IRFR5305TRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.92 $0.38
Polarity / Channel Type P-Channel P-Channel
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at TC=25C -31 A —
Continuous Drain Current (ID) at TA=25C [DATA_NEEDED: ID at TA=25C] —
RDS(on) max at VGS=-10V 60 mOhm 65 mΩ
RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typ] —
Total Gate Charge (Qg) 42 nC (Mouser listing) / 63 nC (Future Electronics listing) —
Maximum Power Dissition at Tc 110 W —
Maximum Power Dissipation at TA 3.8 W —
패키지 TO-263 / D2PAK (surface mount) TO-252AA (DPAK), surface mount
실장 유형 Surface Mount Surface Mount
동작 온도 범위 [DATA_NEEDED: Tj max / operating range] —
Technology HEXFET (fifth generation), IR MOSFET HEXFET fifth-generation planar MOSFET
Packaging Tape & Reel (TR), 800 pcs per reel —
Lead-Free / RoHS Yes (Pb-free suffix PBF) Yes (Pb-free, suffix "PBF")
Continuous Drain Current (ID) at Tc=25C — -31 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C — 110 W
동작 접합 온도 — -55C to +175C
Avalanche Rated — Yes (fully avalanche rated)
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

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