IRF7105TRPBF vs IRF7351TRPBF 비교
다음의 상세 나란히 비교: IRF7105TRPBF 제조: Infineon 및 IRF7351TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF7105TRPBF | IRF7351TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.30 | $0.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Series | IRF7105 (HEXFET Fifth Generation) | — |
| Polarity / Configuration | N-Channel + P-Channel, dual MOSFET in one package | — |
| Drain-to-Source Voltage (Vds) | 25 V | — |
| Continuous Drain Current - N-channel (Id, N-ch) | 3.5 A | — |
| Continuous Drain Current - P-channel (Id, P-ch) | 2.3 A | — |
| Rds(on) Maximum | 100 mOhm | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | IR MOSFET (HEXFET trench) |
| 패키지 | 8-SO (SOIC-8) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| Total Package Power Dissipation (Pd) | 2 W | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | [DATA_NEEDED: junction temperature range] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Packaging Form | Tape & Reel (TR) | — |
| Lead-Free / RoHS Status | Pb-free (PBF suffix), RoHS compliant | — |
| 핀 수 | 8 | — |
| Part Number | — | IRF7351TRPBF |
| Configuration | — | Dual N-Channel MOSFET (Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 8 A |
| On-Resistance RDS(on) max | — | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | — | 0.0137 ohm (13.7 mOhm) |
| Total Gate Charge (Qg) | — | 24 nC |
| Power Dissipation (PD) | — | 2 W |
| 동작 온도 | — | -55C to +150C (junction) |
| Typical Application | — | Synchronous Rectifier for Isolated DC-DC Converters |
| RoHS 상태 | — | Compliant (PBF suffix = lead-free) |
| Lead-Free | — | Yes |
| MSL 레벨 | — | [DATA_NEEDED: MSL Level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |