IRF7306TRPBF vs IRF7105PBF 비교

다음의 상세 나란히 비교: IRF7306TRPBF 제조: Infineon 및 IRF7105PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7306TRPBF IRF7105PBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.55 $0.61
Polarity P-Channel (dual) —
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -3.6 A at 25°C —
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) HEXFET (Fifth Generation)
동작 온도 범위 -55°C to +150°C (junction) —
패키지 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) —
실장 유형 Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
MSL 레벨 1 (per JEDEC J-STD-020) —
RoHS Compliance Yes (PBF suffix indicates Pb-free) Compliant
Qualification Consumer market qualification standards (per IR/Infineon datasheet) Industrial
Avalanche Rated Yes (ruggedized device per datasheet) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7105PBF
FET Type — N-Channel and P-Channel (Dual, Complementary)
N-Channel VDS (Drain-Source Voltage) — 25 V
P-Channel VDS (Drain-Source Voltage) — 25 V
N-Channel Continuous Drain Current (ID) — 3.5 A
P-Channel Continuous Drain Current (ID) — 2.3 A
Total Package Power Dissipation (PD) — 2 W
패키지 / 케이스 — 8-SOIC (SO-8)
핀 수 — 8
Lead-Free / Halogen-Free — Yes / Yes
MSL (Moisture Sensitivity Level) — MSL1
Soldering Compatibility — Vapor Phase, Infrared, Wave
dv/dt Rating — Dynamic (rated per datasheet)

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