IRF7341GTRPBF vs ISA250300C04LMDSXTMA1 비교
다음의 상세 나란히 비교: IRF7341GTRPBF 제조: Infineon 및 ISA250300C04LMDSXTMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon
ISA250300C04LMDSXTMA1 ✓ 활성사양 비교
| 파라미터 | IRF7341GTRPBF | ISA250300C04LMDSXTMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.76 | $0.61 |
| Drain-Source Voltage (VDS) | 55 V | 40 V |
| Continuous Drain Current (ID) | 5.1 A | — |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | — |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | Dual N-channel + P-channel (N+P array) |
| Technology | IR HEXFET Planar MOSFET | Trench MOSFET (OptiMOS 3) |
| 패키지 | 8-SO (SOIC-8) | SO-8 (PG-DSO-8-920) |
| 실장 유형 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) range per channel] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| 동작 온도 범위 | -55 C to +175 C | [DATA_NEEDED: operating temperature range] |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| Continuous Drain Current N-channel | — | 5.9 A (Ta), 7.9 A (Tc) |
| Continuous Drain Current P-channel | — | 5.8 A (Ta), 7.8 A (Tc) |
| Power Dissipation | — | 1.4 W (Ta), 2.5 W (Tc) |
| Packaging | — | Tape & Reel (suffix XTMA1) |
| Datasheet Document | — | Infineon ISA250300C04LMDS datasheet (per Infineon product page) |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) per channel at specified VGS] |