IRF7351TRPBF vs IRF7105PBF 비교

다음의 상세 나란히 비교: IRF7351TRPBF 제조: Infineon 및 IRF7105PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7351TRPBF IRF7105PBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.68 $0.61
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF7351TRPBF IRF7105PBF
Configuration Dual N-Channel MOSFET (Half-Bridge) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 8 A —
On-Resistance RDS(on) max 17.8 mOhm —
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) —
Total Gate Charge (Qg) 24 nC —
Power Dissipation (PD) 2 W —
Technology IR MOSFET (HEXFET trench) HEXFET (Fifth Generation)
패키지 8-SO (SO-8 / SOIC-8) Surface Mount —
실장 유형 Surface Mount Surface Mount
동작 온도 -55C to +150C (junction) —
Typical Application Synchronous Rectifier for Isolated DC-DC Converters —
RoHS 상태 Compliant (PBF suffix = lead-free) —
Lead-Free Yes —
MSL 레벨 [DATA_NEEDED: MSL Level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
FET Type — N-Channel and P-Channel (Dual, Complementary)
N-Channel VDS (Drain-Source Voltage) — 25 V
P-Channel VDS (Drain-Source Voltage) — 25 V
N-Channel Continuous Drain Current (ID) — 3.5 A
P-Channel Continuous Drain Current (ID) — 2.3 A
Total Package Power Dissipation (PD) — 2 W
패키지 / 케이스 — 8-SOIC (SO-8)
핀 수 — 8
Lead-Free / Halogen-Free — Yes / Yes
RoHS Compliance — Compliant
MSL (Moisture Sensitivity Level) — MSL1
Qualification — Industrial
Soldering Compatibility — Vapor Phase, Infrared, Wave
dv/dt Rating — Dynamic (rated per datasheet)

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