IRF7380TRPBF vs IRF7469TRPBF 비교
다음의 상세 나란히 비교: IRF7380TRPBF 제조: Infineon 및 IRF7469TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF7380TRPBF | IRF7469TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.32 | $0.37 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7380TRPBF | — |
| Configuration | Dual N-Channel MOSFET Array (2 independent FETs in one package) | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 3.6 A | — |
| On-Resistance RDS(on) max | 73 mOhm at VGS = 10 V | — |
| Technology | IR MOSFET™ (Infineon HEXFET-style planar N-ch) | IR MOSFET™ (HEXFET) |
| Total Power Dissipation (PD) | 2 W | — |
| 패키지 | SO-8 (8-SO, SOIC-8) | 8-SO (SOIC-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 접합 온도 | -55 C to +150 C | — |
| Gate Drive Voltage (typical) | 10 V (full RDS(on)); logic-level not guaranteed | — |
| Lead-Free / RoHS | Yes (Pb-free plating, suffix PBF) | — |
| Packaging | Tape & Reel (suffix TR) | — |
| Primary Application | High-frequency DC-DC converters | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) at TA=25°C | — | 9 A |
| Rds(on) Max at Vgs=10V | — | 17 mΩ |
| Total Gate Charge (Qg) | — | 15 nC |
| Gate-Source Voltage (Vgs) Max | — | ±20 V |
| Power Dissipation (Pd) at TA=25°C | — | 2.5 W |
| 동작 온도 범위 | — | -55°C to +150°C (Tj) |
| MSL 레벨 | — | 1 (unlimited) |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes |
| 할로겐 프리 | — | Yes |
| Channel Mode | — | Enhancement |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |